| PART |
Description |
Maker |
| EIA1415-8P |
14.4-15.35GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIA1415-8P |
14.4-15.35GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1415A1-3 |
14.40-15.35GHz, 3-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EVAL-ADF4213EB2 |
2.35GHz Dual Evaluation Board For PLL Frequency Synthesizer
|
Analog Devices, Inc.
AD[Analog Devices]
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A)
Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲）
Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲）
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
TE Connectivity, Ltd.
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
